2um窄線寬激光器EP2000-DM-B The EP2000-DM-B laser diode module is a cost effective, highly coherent laser source. The patented discrete mode (DFB-like) ridge waveguide technology and epistructure design is used to deliver an InP-based strained quantum-well laser diode source emitting at a wavelength of 2.0µm with high SMSR. The Discrete Mode laser diode chip is packaged in an industry standard, hermetically sealed 14 pin butterfly package with integrated optical isolator, thermo-electric cooler (TEC), monitor photodiode and thermistor.

Key Features	Applications
Excellent reliability	High performance gas sensing
Mode-Hop free tuning >2nm	Seed Laser
Integrated optical isolator
Narrow linewidth<2MHz

Optical and electrical characteristics: (T = 25°C)

PARAMETER	SYMBOL	MIN	TYP	MAX	UNIT
LASER DIODE
Output Power in Fibre	P_f	1.5	1.75	2	mW
Centre Wavelength	λcen	1950	2001	2150	nm
Threshold Current	Ith	-	20	40	mA
Operating Current	Iop	-	70	120	mA
Forward Voltage	V_f	-	1.3	1.6	V
Side Mode Suppression Ratio	SMSR	30	40	-	dB
Temperature Tuning Coefficient		-	0.1	-	nm/K
Current Tuning Coefficient		-	0.01	-	nm/mA
Quantum Efficiency	η	0.02	0.03	-	mW/mA
Optical Isolation	ISO		40	-	dB
MONITOR DIODE*
Monitor Photo Current	Im	0.2	0.4	0.8	mA
Monitor Operating Voltage	Vm	-	-	5.5	V
Monitor Dark Current (at 5V V_DR)	Imd	-	-	< 0.2	µA

Absolute Maximum Ratings (T_sub= 25°C)

Parameter	Symbol	Ratings	Units
Laser diode reverse voltage	V_R	2	V
Laser diode forward current	I_F	120	mA
Photodiode reverse voltage	VDR	20	V
Peltier current	I_P	1.2	A
Operating case temperature	Tcase	-20 to 65	°C
Storage temperature	Tstg	-40 to 85	°C